Introduction to Isolated gate driver chip
Isolated gate driver chip are specialized semiconductor devices that perform the core functions of isolating high- and low-voltage domains and driving power switches within power electronic conversion systems. They are primarily used to drive various power devices-such as IGBTs, MOSFETs, and wide-bandgap (SiC/GaN) semiconductor switches-addressing challenges related to electrical isolation, signal transmission, and drive capability matching between low-voltage/low-signal control circuits and high-voltage/high-current power circuits. These chips are indispensable components in sectors such as new energy vehicles, photovoltaic power generation, energy storage converters, industrial variable-frequency drives, and rail transportation.
Operating Principle of Isolated gate driver chip
In terms of operating principles,Isolated gate driver chip must simultaneously fulfill two core functions: first, electrical isolation, which completely separates the low-voltage control logic circuitry from the high-voltage power switching circuit at the electrical level. This prevents high-voltage surges from the power circuit from damaging the low-voltage control circuit, suppresses common-mode interference, ensures the stable operation of control circuits and operator safety, and enables reliable signal transmission across potential domains. Second, gate driving, which provides sufficient sourcing and sinking current capabilities to meet the charging and discharging demands of the power device's gate capacitance during turn-on and turn-off transitions; this minimizes switching times and losses while enhancing the device's operational efficiency.
Specific part numbers for Isolated gate driver chip
The UCC23525 driver is an opto-compatible, single-channel, Isolated gate driver chip for IGBTs, MOSFETs and SiC MOSFETs, with 5A source and 5A sink peak output current and 5kVRMSreinforced isolation rating. The high supply voltage range of 30V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. The UCC23525 can drive both low-side and high-side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design.
Performance highlights include high common-mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. The UCC23525 is offered in a stretched SO-6 package, supporting 5KVRMS reinforced isolation rating. The stretched SO-6 package has >8.5mm creepage and clearance, and a mold compound from material group I which has a comparative tracking index (CTI) >600V.
The high performance and reliability of the UCC23525 makes the device ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers.
Isolated Gate Driver Chip Parameters
|
Number of channels |
1 |
|
Isolation rating |
Reinforced |
|
Power switch |
IGBT, MOSFET, SiCFET |
|
Withstand isolation voltage (VISO) (Vrms) |
5000 |
|
Working isolation voltage (VIOWM) (Vrms) |
1063 |
|
Transient isolation voltage (VIOTM) (VPK) |
8000 |
|
Peak output current (source) (typ) (A) |
5 |
|
Peak output current (sink) (typ) (A) |
5 |
|
Features |
High CMTI, Opto-compatible input |
|
Output VCC/VDD (min) (V) |
13 |
|
Output VCC/VDD (max) (V) |
30 |
|
Input threshold |
4 mA |
|
Operating temperature range (°C) |
-40 to 125 |
|
Rating |
Catalog |
|
Bootstrap supply voltage (max) (V) |
1500 |
|
Fall time (ns) |
25 |
|
Undervoltage lockout (typ) (V) |
12 |
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